au.\*:("TRAENKLE, Guenther")
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InP DHBT Process in Transferred-Substrate Technology With ft and fmax Over 400 GHzKRAEMER, Tomas; RUDOLPH, Matthias; SCHMUECKLE, Franz Josef et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 9, pp 1897-1903, issn 0018-9383, 7 p.Article
InP-DHBT-on-BiCMOS Technology With fT/fmax of 400/350 GHz for Heterogeneous Integrated Millimeter-Wave SourcesKRAEMER, Tomas; OSTERMAY, Ina; LISKER, Marco et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 7, pp 2209-2216, issn 0018-9383, 8 p.Article
